Superlattice hole injection layers for UV LEDs grown on SiC

Stacking of adjacent graphene layers grown on C-face SiC

4H-SiC Epitaxial Layers Grown on on-axis Si-face Substrate

We report on the growth of 4H-SiC epitaxial layer on Si-face polished nominally on-axis 2” full wafer, using Hot-Wall CVD epitaxy. The polytype stability has been maintained over the larger part of the wafer, but 3C inclusions have not been possible to avoid. Special attention has given to the mechanism of generation and propagation of 3C polytype in 4H-SiC epilayer. Different optical and struc...

GaN epitaxial layers grown on WI-SIC by the sublimation sandwich technique

We report on the structural and optical properties of GaN epitaxial layers grown on GH-Sic. We employed the sublimation sandwich method to grow single crystal layers at high growth rates with free carrier concentrations of 2 X 1Oi7 cmw3. Very narrow x-ray diffraction peaks of the GaN (0002) plane are obtained indicating the high quality of this system. These tidings are directly reflected in th...

Reduction of structural defects in thick 4H-SiC epitaxial layers grown on 4° off-axis substrates

Maskless photolithography using UV LEDs.

A UV light emitting diode (LED) with a maximum output of 372 nm was collimated using a pinhole and a small plastic tube and focused using a microscope objective onto a substrate for direct lithographic patterning of the photoresist. Movement of the substrate with a motorised linear stage (syringe pump) allowed lines in SU-8 to be pattered with a width down to 35 microm at a linear velocity of 8...